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2N6027 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Programmable Unijunction Transistor - ON Semiconductor

भाग संख्या 2N6027
समारोह Programmable Unijunction Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=2N6027?> डेटा पत्रक पीडीएफ

2N6027 pdf
2N6027, 2N6028
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Power Dissipation*
Derate Above 25°C
DC Forward Anode Current*
Derate Above 25°C
PF
1/qJA
IT
300 mW
4.0 mW/°C
150 mA
2.67 mA/°C
DC Gate Current*
Repetitive Peak Forward Current
100 ms Pulse Width, 1% Duty Cycle
20 ms Pulse Width, 1% Duty Cycle*
IG
ITRM
"50
1.0
2.0
mA
A
Non−Repetitive Peak Forward Current
10 ms Pulse Width
ITSM
5.0 A
Gate to Cathode Forward Voltage*
Gate to Cathode Reverse Voltage*
Gate to Anode Reverse Voltage*
Anode to Cathode Voltage* (Note 1)
Capacitive Discharge Energy (Note 2)
VGKF
VGKR
VGAR
VAK
E
40
*5.0
40
±40
250
V
V
V
V
mJ
Power Dissipation (Note 3)
PD 300 mW
Operating Temperature
TOPR
−50 to +100
°C
Junction Temperature
TJ
−50 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 W
Anode negative, RGA = open
2. E = 0.5  CV2 capacitor discharge energy limiting resistor and repetition.
3. Derate current and power above 25°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes
(t1/16from case, 10 seconds maximum)
Symbol
RqJC
RqJA
TL
Max Unit
75 °C/W
200 °C/W
260 °C
http://onsemi.com
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