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2N5962 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN General Purpose Amplifier - Fairchild Semiconductor

भाग संख्या 2N5962
समारोह NPN General Purpose Amplifier
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=2N5962?> डेटा पत्रक पीडीएफ

2N5962 pdf
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0
45
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
45 V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
8.0 V
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 65 °C
VEB = 5.0 V, IC = 0
2.0 nA
50 nA
1.0 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 µA
VCE = 5.0 V, IC = 100 µA
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
IC = 10 mA, IB = 0.5 mA
VCE = 5.0 V, IC = 1.0 mA
450
500
550
600 1400
0.2
0.5 0.7
V
V
SMALL SIGNAL CHARACTERISTICS
Ccb Collector-Base Capacitance
Ceb Emitter-Base Capacitance
hfe Small-Signal Current Gain
NF Noise Figure
VCB = 5.0 V
4.0 pF
VEB = 0.5 V
6.0 pF
IC = 10 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
600 200
1.0
VCE = 5.0 V, IC = 10 µA,
RS = 10 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 10 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 100 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 10 µA,
RS = 10 k, f = 10 Hz -10 kHz
BW = 15.7 kHz
3.0 dB
6.0 dB
4.0 dB
8.0 dB
3.0 dB
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%

विन्यास 2 पेज
डाउनलोड[ 2N5962 Datasheet.PDF ]


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