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885010 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - ISM Notch Filter - TriQuint Semiconductor

भाग संख्या 885010
समारोह ISM Notch Filter
मैन्युफैक्चरर्स TriQuint Semiconductor 
लोगो TriQuint Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=885010?> डेटा पत्रक पीडीएफ

885010 pdf
885010
2442 MHz BAW Filter
Specifications
Electrical Specifications (1)
Specified Temperature Range: (2) +25 ºC
Parameter
Center Frequency
Maximum Insertion Loss
Absolute Attenuation (4)
Amplitude Variation
Conditions
2305 - 2360 MHz
2360 - 2380 MHz
2496 - 2502 MHz
2502 - 2520 MHz
2520 - 2690 MHz
2401 - 2403 MHz
2403 - 2481 MHz
2481 - 2483 MHz
2496 - 2506 MHz
Specified Temperature Range: (2) -30 to +85 ºC
Parameter
Maximum Insertion Loss
Absolute Attenuation (4)
Amplitude Variation
Input/output Return Loss
Source Impedance (single-ended) (5)
Load Impedance (single-ended) (5)
Conditions
2305 - 2360 MHz
2360 - 2380 MHz
2496 - 2502 MHz
2502 - 2520 MHz
2520 - 2690 MHz
2401 - 2403 MHz
2403 - 2481 MHz
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2481 - 2483 MHz
2401 - 2403 MHz
2403 - 2481 MHz
2481 - 2483 MHz
2510 - 2520 MHz
Min
-
-
-
-
-
-
14
17
14
-
Typical (3)
2442
2.8
5.0
3.5
1.8
1.5
20
20
20
2.5
Max
-
3.5
-
-
3.0
2.5
-
-
-
4.0
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB p-p
Min
-
-
-
-
-
10
11
10
-
-
-
6
-
-
Typical (3)
3.8 (@+85 C)
7.0 (@+85 C)
5.0 (@-30 C)
2.3 (@-30 C)
1.8
12 (@-30 C)
20
12 (@+85 C)
0.4
0.6
1.0
12
50
50
Max
4.5
-
-
4.0
3.5
-
-
-
1.5
1.5
1.5
-
-
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB p-p
dB p-p
dB p-p
dB
Notes:
1. All specifications are based on the TriQuint schematic for the main reference design shown on page 3
2. In production, devices will be tested at room temperature to a guardbanded specification to ensure electrical compliance over temperature
3. Typical values are based on average measurements at room temperature, unless otherwise noted
4. Relative to zero dB
5. This is the optimum impedance in order to achieve the performance shown
Absolute Maximum Ratings
Parameter (6)
Operating Temperature
Storage Temperature
Input Power, operating (7) (In band, CW signal) (equivalent to OFDM Pav)
Input Power, instantaneous peak (7) (In band, CW signal) (OFDM Pmax)
Rating
-30 to +85 oC
-40 to +85 oC
+28 dBm
+37.5 dBm
6. Operation of this device outside the parameter ranges given above may cause permanent damage.
7. Power handling capability supports WiMAX/OFDM applications
Data Sheet: Rev G 3/17/11
© 2011TriQuint Semiconductor, Inc.
- 2 of 6 -
Disclaimer: Subject to change without notice e
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अनुशंसा डेटापत्रक

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