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2SC3338 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Epitaxial - Hitachi Semiconductor

भाग संख्या 2SC3338
समारोह Silicon NPN Epitaxial
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SC3338?> डेटा पत्रक पीडीएफ

2SC3338 pdf
2SC3338
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
20
12
3
50
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V(BR)CBO
20
V
voltage
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO 12 — — V
voltage
IC = 1 mA, RBE =
Emitter cutoff current
Collector cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
I EBO
I CBO
hFE
Cob
fT
PG
— — 10 µA VEB = 3 V, IC = 0
0.5 µA
VCB = 15 V, IC = 0
30 90 200
VCE = 5 V, IC = 20 mA
— 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
3.5 4.5 —
GHz VCE = 5 V, IC = 20 mA
— 8.2 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF — 2.0 — dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “AR”.
See characteristic curves of 2SC3127.
2

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डाउनलोड[ 2SC3338 Datasheet.PDF ]


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