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2SC3075 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Diffused Type TRANSISTOR - Toshiba Semiconductor

भाग संख्या 2SC3075
समारोह Silicon NPN Triple Diffused Type TRANSISTOR
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2SC3075?> डेटा पत्रक पीडीएफ

2SC3075 pdf
2SC3075
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 400 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.5 A
IC = 0.1 A, IB = 0.01 A
IC = 0.1 A, IB = 0.01 A
Min Typ. Max Unit
― ― 100 µA
― ― 100 µA
500
V
400
V
20 100
10 ― ―
― ― 0.5 V
― ― 1.0 V
Rise on time
Switching time Storage time
Fall time
tr
20 µs
IB1
OUTPUT
1.0
INPUT
tstg IB2 IB2
― ― 2.5 µs
VCC 200 V
tf IB1 = IB2 = 0.05 A,
DUTY CYCLE 1%
― ― 1.5
Marking
C3075
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23

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डाउनलोड[ 2SC3075 Datasheet.PDF ]


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