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VSKJ236-xxPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard Recovery Diodes - Vishay Siliconix

भाग संख्या VSKJ236-xxPBF
समारोह Standard Recovery Diodes
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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VSKJ236-xxPBF pdf
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VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state
current at case temperature
IF(AV)
Maximum RMS on-state current
IF(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
I2t
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
180° conduction, half sine wave
165 195 230
100 100 100
260 305 360
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4000
4200
4750
4980
5500
5765
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3350
3500
80
73
4000
4200
113
103
4630
4850
151
138
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
56 80 107
52 73 98
t = 0.1 ms to 10 ms, no voltage reapplied
798 1130 1516
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
0.73
0.88
0.69
0.78
0.7
0.83
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 1.5 1.3 1.2
(I > x IF(AV)), TJ maximum
IFM = x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.26
1.43
1.2
1.38
1.07
1.46
UNITS
A
°C
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
IRRM
VINS
TJ = 150 °C
50 Hz, circuit to base, all terminals shorted,
t=1s
VSK.166 VSK.196 VSK.236 UNITS
20 mA
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
TJ, TStg
RthJC
RthCS
Approximate weight
Case style
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
VALUES
UNITS
VSK.166 VSK.196 VSK.236
- 40 to 150
°C
0.2 0.16 0.14
K/W
0.05
4 to 6
200
7.1
INT-A-PAK
Nm
g
oz.
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94357
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-10
Datasheet pdf - http://www.DataSheet4U.net/

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भाग संख्याविवरणविनिर्माण
VSKJ236-xxPBFStandard Recovery DiodesVishay Siliconix
Vishay Siliconix


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