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C3D04065A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D04065A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
1 Page
		
<?=C3D04065A?> डेटा पत्रक पीडीएफ

C3D04065A pdf
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.4
1.7
6
12
Max.
1.7
2.4
30
120
Unit
V
μA
QC Total Capacitive Charge
10
C Total Capacitance
231
18.5
15
EC Capacitance Stored Energy
1.4
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 4 A TJ=25°C
IF = 4 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 4 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
12
10 TJ = -55 °C
TJ = 25 °C
8 TJ = 75 °C
TJ = 125 °C
6
TJ = 175 °C
4
2
0
0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2 C3D04065A Rev. D, 08-2016
100
80
60 TJ = 175 °C
TJ = 125 °C
40 TJ = 75 °C
TJ = 25 °C
20 TJ = -55 °C
0
0 200 400 600 800 1000 1200
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics

विन्यास 6 पेज
डाउनलोड[ C3D04065A Datasheet.PDF ]


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