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C3D10170H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D10170H
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.7 2
3 3.5
V
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
IR Reverse Current
20 60
100 300
μA
VVRR
=
=
1700
1700
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
96
nC VdiR/d=t 1=702000V,AI/Fμ=s 10 A
TJ = 25°C
C Total Capacitance
827
78
41
pF
VVVRRR
=
=
=
0 V,
200
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Note
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.65
Unit
°C/W
Typical Performance
20
18
16
14
12
10
8 TTTJJJ===-275555°°°CCC
TJ =125°C
6 TJ =175°C
4
2
0
0123456
VF (V)
Figure 1. Forward Characteristics
7
5
4
3 TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
2
1
0
0 250 500 750 1000 1250 1500 1750 2000 2250
VR (V)
Figure 2. Reverse Characteristics
2 C3D10170H Rev. -
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