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BSC070N10NS3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या BSC070N10NS3G
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=BSC070N10NS3G?> डेटा पत्रक पीडीएफ

BSC070N10NS3G pdf
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
BSC070N10NS3 G
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=75 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=50 A
V GS=6 V, I D=25 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
100
2
-
-
-
-
-
-
36
-
2.7
0.01
10
1
6.3
8
1.5
72
-V
3.5
1 µA
100
100 nA
7 mW
14
-W
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2011-03-11

विन्यास 10 पेज
डाउनलोड[ BSC070N10NS3G Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BSC070N10NS3GPower-TransistorInfineon Technologies
Infineon Technologies


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