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VFT4060C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VFT4060C
समारोह Dual Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VFT4060C?> डेटा पत्रक पीडीएफ

VFT4060C pdf
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New Product
VFT4060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.43
0.48
0.53
0.32
0.39
0.48
-
34
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT4060C
5.0
3.0
MAX.
-
-
0.62
-
-
0.57
6.0
190
UNIT
V
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT4060C-E3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.5 D = 0.8
12 D = 0.3
10
D = 0.2
8
6 D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 89379
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 07-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/

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