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2SC2613 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Diffused - Hitachi Semiconductor

भाग संख्या 2SC2613
समारोह Silicon NPN Triple Diffused
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SC2613?> डेटा पत्रक पीडीएफ

2SC2613 pdf
2SC2613
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
400
VCEX(sus)
400
Typ
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test.
V(BR)EBO
I CBO
I CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
t on
t stg
tf
7
15
7
1.2
Max Unit
—V
—V
—V
100 µA
100 µA
1.0 V
1.5 V
1.0 µs
2.5 µs
1.0 µs
Test conditions
IC = 0.2 A, RBE = ,
L = 100 mH
IC = 5 A, IB1 = –IB2 = 1 A
VBE = –5 V, L = 180 µH,
Clamped
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE =
VCE = 5 V, IC = 2.5 A*1
VCE = 5 V, IC = 5 A*1
IC = 2.5 A, IB = 0.5 A*1
IC = 2.5 A, IB = 0.5 A*1
IC = 5 A, IB1 = –IB2 = 1 A,
VCC 150 V
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
100
iC (peak)
10
IC (max)
(Continuous)
1.0
0.1
Ta = 25°C, 1 Shot
0.01
1 3 10 30 100 300 1,000
Collector to emitter Voltage VCE (V)
2

विन्यास 7 पेज
डाउनलोड[ 2SC2613 Datasheet.PDF ]


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