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2SC2611 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Diffused - Hitachi Semiconductor

भाग संख्या 2SC2611
समारोह Silicon NPN Triple Diffused
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SC2611?> डेटा पत्रक पीडीएफ

2SC2611 pdf
2SC2611
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
300
Collector to emitter breakdown V(BR)CEO
voltage
300
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CEO
hFE
VCE(sat)
30
Gain bandwidth product
Collector output capacitance
fT
Cob
50
Typ
80
Max Unit Test conditions
—V
IC = 10 µA, IE = 0
—V
IC = 1 mA, RBE =
—V
IE = 10 µA, IC = 0
1.0 µA
200
1.5 V
VCE = 250 V, RBE =
VCE = 20 V, IC = 20 mA
IC = 20 mA, IB = 2 mA
— MHz VCE = 20 V, IC = 20 mA
4.0 pF
VCB = 20 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve
1.5
1.0
0.5
0 50 100 150
Ambient Temperature TC (°C)
Typical Output Characteristics
1.0
16
14
0.8 12
0.6 10
8
0.4 6
4
0.2 2 µA
IB = 0
0 0.4 0.8 1.2 1.6 2.0
Collector to emitter Voltage VCE (V)
2

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डाउनलोड[ 2SC2611 Datasheet.PDF ]


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2SC2610Silicon NPN Triple DiffusedHitachi Semiconductor
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