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2SC1775A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Epitaxial - Hitachi Semiconductor

भाग संख्या 2SC1775A
समारोह Silicon NPN Epitaxial
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SC1775A?> डेटा पत्रक पीडीएफ

2SC1775A pdf
2SC1775, 2SC1775A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SC1775
90
90
5
50
300
150
–55 to +150
2SC1775A
120
120
5
50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SC1775
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO 90
Collector cutoff current ICBO
——
——
DC current transfer ratio hFE1*1
hFE2
400 —
160 —
2SC1775A
Max Min Typ
— 120 —
0.5 —
——
1200 400
— 160
Base to emitter voltage VBE
— — 0.75 —
Collector to emitter
saturation voltage
VCE(sat)
0.5 —
Gain bandwidth product fT
Collector output
capacitance
Cob
— 200 — —
— 1.6 — —
Noise figure
NF — — 5.0 —
200
1.6
— — 1.5 —
Note: 1. The 2SC1775/A is grouped by hFE1 as follows.
EF
400 to 800 600 to 1200
Max Unit Test conditions
—V
IC = 1 mA, RBE =
µA
0.5 µA
1200
0.75 V
0.5 V
VCB = 75 V, IE = 0
VCB = 100 V, IE = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V,
IC = 0.1 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
— MHz VCE = 12 V, IC = 2 mA
— pF VCB = 25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = 6 V,
IC = 50 µA,
Rg = 50 k
f = 10
Hz
f=1
kHz
2

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डाउनलोड[ 2SC1775A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2SC1775Silicon NPN EpitaxialHitachi Semiconductor
Hitachi Semiconductor
2SC1775ASilicon NPN EpitaxialHitachi Semiconductor
Hitachi Semiconductor


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