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2SC1645S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High-gain Amplifier Transistor (-32V/ -0.3A) - Rohm

भाग संख्या 2SC1645S
समारोह High-gain Amplifier Transistor (-32V/ -0.3A)
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
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2SC1645S pdf
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
2SD1383K / 2SC1645S
Min.
40
32
6
5000
Typ.
250
5
Max.
1
1
1.5
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=100µA
IC= −1mA , RBE=0
IE=100µA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
1
VCE=5V, IE= −10mA, f=100MHz 2
VCB=10V, IE=0A, f=1MHz
zElectrical characteristic curves
125
100
75
50
25
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation curves
500 VCE=6V
200
100
50
20
10
5
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristisc
100
IB=10µA
Ta=25°C
9µA
8µA
7µA
50
6µA
5µA
4µA
0 3µA
0 1 2 3 45
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output characteristics
Ta=25°C
50000
5V
20000
10000
5000
VCE=3V
2000
1000
500
5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
VCE=5V
100000
50000
Ta=1002°5C°C
20000 55°C
10000
5000
5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
IC/IB=500
2
1 Ta= 55°C
0.5
100°C
25°C
0.2
0.1
0.5 1 2
5 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/3

विन्यास 4 पेज
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