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FDMB2307NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Common Drain N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMB2307NZ
समारोह Dual Common Drain N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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FDMB2307NZ pdf
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
IS1S2
IGSS
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
VS1S2 = 16 V, VGS = 0 V
VGS = 12 V, VS1S2 = 0 V
1 μA
10 μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rS1S2(on)
Static Source1 to Source2 On Resistance
gFS Forward Transconductance
VGS = VS1S2, IS1S2 = 250 μA
VGS = 4.5 V, IS1S2 = 8 A
VGS = 4.2 V, IS1S2 = 7.4 A
VGS = 3.1 V, IS1S2 = 7 A
VGS = 2.5 V, IS1S2 = 6.7 A
VGS = 4.5 V, IS1S2 = 8 A,
TJ = 125 °C
VS1S2 = 5 V, IS1S2 = 8 A
0.6 1 1.5 V
10.5 13.5 16.5
11 14 18
11.5 16
12 18
21 mΩ
24
11 20 29
41 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VS1S2 = 10 V, VGS = 0 V,
f = 1 MHz
1760
229
211
2640
345
320
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VS1S2 = 10 V, IS1S2 = 8 A,
VGS = 4.5 V, RGEN = 6 Ω
VGS = 0 V to 5 V
VGS = 0 V to 4.5 V VS1S2 = 10 V,
IS1S2 = 8 A
12 22 ns
19 34 ns
32 51 ns
9.5 17 ns
20 28 nC
18 25 nC
2.8 nC
5.3 nC
Source1- Source2 Diode Characteristics
Ifss Maximum Continuous Source1-Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward Voltage
VG1S 1= 0 V, VG2S2= 4.5 V,
Ifss= 8 A
(Note 2)
8
0.8 1.2
A
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 161 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
2
www.fairchildsemi.com
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FDMB2307NZDual Common Drain N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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