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H04N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Field Effect Transistor - Hi-Sincerity Mocroelectronics

भाग संख्या H04N60
समारोह N-Channel Power Field Effect Transistor
मैन्युफैक्चरर्स Hi-Sincerity Mocroelectronics 
लोगो Hi-Sincerity Mocroelectronics लोगो 
पूर्व दर्शन
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<?=H04N60?> डेटा पत्रक पीडीएफ

H04N60 pdf
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 2/5
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max.
RθJA Thermal Resistance Junction to Ambient Max.
TO-220AB
TO-220FP
Value
62.5
1.3
5
Units
°C/W
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=2A)*
Forward Transconductance (VDS=15V, ID=2A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=4A, RG=9.1,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=4A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 - - V
- - 1 uA
- - 50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 2.2
2 - - mhos
- 540 -
- 125 -
pF
-8-
- 12 -
-7-
ns
- 19 -
- 10 -
-5-
- 2.7 - nC
-2-
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
VSD Forward On Voltage(1)
ton Forward Turn-On Time
trr Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=4A, VGS=0V, TJ=25oC
IS=2A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
- - 1.6 V
- ** - ns
- 302 -
ns
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
H04N60N-Channel Power Field Effect TransistorHi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics


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