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UP2003 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - UTC

भाग संख्या UP2003
समारोह P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=UP2003?> डेटा पत्रक पीडीएफ

UP2003 pdf
UP2003
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 1)
ID -9
IDM -50
A
Power Dissipation
PD 2.5 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
Junction-to-Ambient
Junction-to-Case
PARAMETER
SYMBOL
θJA
θJC
MIN
TYP
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
MAX
50
25
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Source Leakage Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS =0 V, ID=-250µA
VDS =-24 V, VGS =0 V
VDS =-20 V, VGS =0 V
VDS =0 V, VGS =±20V
ON CHARACTERISTICS
Gate-Threshold Voltage
On-State Drain Current (Note 2)
Drain-Source On-Resistance (Note 2)
VGS(TH)
ID(ON)
RDS(ON)
VDS =VGS, ID =-250 µA
VDS = -5V, VGS = -10V
VGS =-4.5 V, ID =-7 A
VGS =-10 V, ID =-9 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 3)
Gate to Source Charge
Gate Charge at Threshold
Gate to Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-ON Delay Time
Turn-OFF Fall-Time
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tD(ON)
tF
VDS =-15 V, VGS =0V, f=1MHz
VDS =-0.5V(BR)DSS, VGS =-10 V,
ID =-9 A
VDS =-15V, ID-1A, VGS =-10V,
RGS =6,RL=1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
Diode Pulse Current (Note 1)
ISM
Forward Voltage (Note 2)
VSD IF=IS, VGS=0 V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width 300μsec, Duty Cycle 2%
3. Independent of operating temperature.
MIN TYP MAX UNIT
-25 V
-1
-10
µA
±100 nA
-1.0 -1.5 -3.0 V
-50 A
25
15
35
20
m
1610
410
200
pF
17 24
5 nC
6
6.2 9.3
10
18 ns
10
5
-2.1
-4
A
-1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-202.B

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डाउनलोड[ UP2003 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
UP2003P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORUTC
UTC


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