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2SA893A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Epitaxial - Hitachi Semiconductor

भाग संख्या 2SA893A
समारोह Silicon PNP Epitaxial
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=2SA893A?> डेटा पत्रक पीडीएफ

2SA893A pdf
2SA893, 2SA893A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA893
–90
–90
–5
–50
300
150
–55 to +150
2SA893A
–120
–120
–5
–50
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to emitter
breakdown voltage
V(BR)CEO
Collector cutoff current ICBO
DC current transfer ratio hFE*1
2SA893
Min Typ
–90 —
——
——
250 —
Max
–0.5
800
2SA893A
Min Typ
–120 —
——
——
250 —
Base to emitter voltage VBE
— — –0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
——
–0.5 —
Gain bandwidth product fT
— 120 — — 120
Collector output
capacitance
Noise figure
Cob — 1.8 — — 1.8
NF — 2 10 — 2
Note: 1. The 2SA893/A is grouped by hFE as follows.
DE
250 to 500 400 to 800
Max Unit Test conditions
—V
IC = –1 mA, RBE =
µA
–0.5 µA
800
–0.75 V
–0.5 V
— MHz
— pF
VCB = –75 V, IE = 0
VCB = –100 V, IE = 0
VCE = –12 V,
IC = –2 mA
VCE = –12 V,
IC = –2 mA
IC = –10 mA,
IB = –1 mA
VCE = –12 V,
IC = –2 mA
VCB = –25 V, IE = 0,
f = 1 MHz
10 dB VCE = –6 V,
IC = –50 µA
Rg = 50 k, f = 1 kHz
See characteristic curves of 2SA872 and 2SA872A
2

विन्यास 5 पेज
डाउनलोड[ 2SA893A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2SA893Silicon PNP EpitaxialHitachi Semiconductor
Hitachi Semiconductor
2SA893ASilicon PNP EpitaxialHitachi Semiconductor
Hitachi Semiconductor


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