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APTGT600A60G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Phase leg Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT600A60G
समारोह Phase leg Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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<?=APTGT600A60G?> डेटा पत्रक पीडीएफ

APTGT600A60G pdf
APTGT600A60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
750 µA
VGE =15V
IC = 600A
Tj = 25°C
Tj = 150°C
1.4 1.8
1.5
V
VGE = VCE , IC = 2mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
800 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
49
3.1 nF
1.5
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 600A
RG = 1Ω
VGE = ±15V
VBus = 300V
Tj = 25°C
Tj = 150°C
IC = 600A
RG = 1Ω
Tj = 25°C
Tj = 150°C
130
55
250
60
145
60
320
80
3
5.5
17
21
ns
ns
mJ
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=600V
IF = 600A
VGE = 0V
600 V
Tj = 25°C
Tj = 150°C
350
550
µA
Tc = 80°C
600
A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.4
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 600A
VR = 300V
di/dt =5000A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
120
210
27
57
ns
µC
Er Reverse Recovery Energy
Tj = 25°C
Tj = 150°C
6.9
14.1
mJ
www.microsemi.com
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