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L5NK65Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET - STMicroelectronics

भाग संख्या L5NK65Z
समारोह N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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L5NK65Z pdf
STL5NK65Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID (2)
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT (2) Total Dissipation at TC = 25°C (Steady State)
PTOT (1) Total Dissipation at TC = 25°C (Steady State)
Derating Factor (2)
dv/dt (4) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
THERMAL DATA
Symbol
Parameter
Rthj-F Thermal Resistance Junction-Foot (Drain)
Rthj-amb (2) Thermal Resistance Junction-ambient
Note: 1. The value is rated according to Rthj-F.
2. When Mounted on FR-4 Board of 1inch2, 2 oz Cu
3. Pulse width limited by safe operating area
4. ISD<4.2A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
650
650
± 30
0.76
0.48
3
2.5
75
0.02
4.5
–55 to 150
Max.
1.67
50
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
Max Value
4.2
190
Unit
A
mJ
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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L5NK65ZN-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFETSTMicroelectronics
STMicroelectronics


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