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2SA887 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - POWER TRANSISTOR - Inchange Semiconductor

भाग संख्या 2SA887
समारोह POWER TRANSISTOR
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=2SA887?> डेटा पत्रक पीडीएफ

2SA887 pdf
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=B -0.1A
VBEsat Base-emitter saturation voltage
IC=-2A ;IB=B -0.2 A
hFE-1
DC current gain
IC=-100mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
ICBO Collector cut-off current
VCB=-40V; IE=0
ICEO Collector cut-off current
VCE=-20V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
fT Transition frequency
IE=0.5A ; VCB=-5V
‹ hFE-2 Classifications
PQR
50-100 80-160 120-220
Product Specification
2SA887
MIN TYP. MAX UNIT
-50 V
-70 V
-0.6 -1.2
V
-1.0 -1.5
V
30
50 220
-1.0 μA
-100 μA
-10 μA
150 MHz
2

विन्यास 3 पेज
डाउनलोड[ 2SA887 Datasheet.PDF ]


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