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M2N7000 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - TSM2N7000 - Taiwan Semiconductor

भाग संख्या M2N7000
समारोह TSM2N7000
मैन्युफैक्चरर्स Taiwan Semiconductor 
लोगो Taiwan Semiconductor लोगो 
पूर्व दर्शन
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<?=M2N7000?> डेटा पत्रक पीडीएफ

M2N7000 pdf
TSM2N7000
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
VGS = 0V, ID = 10µA
VDS = VGS, ID = 1mA
VGS = ±15V, VDS = 0V
VDS = 48V, VGS = 0V
VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA
VDS = 15V, ID = 300mA
IS = 200mA, VGS = 0V
VDS = 25V, VGS = 0V,
f = 1.0MHz
BVDSS
VGS(TH)
IGSS
IDSS
RDS(ON)
gfs
VSD
Ciss
Coss
Crss
Turn-On Rise Time
VDD = 15V, RL = 30Ω,
Turn-Off Fall Time
Notes:
ID = 500mA,
VGEN = 10V, RG = 25Ω
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
tr
tf
Min
60
0.8
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
7.5
320
1.3
60
25
5
10
10
Max Unit
-- V
3.0 V
±10 nA
1.0 µA
5.0 Ω
--
-- mS
1.5 V
--
-- pF
--
--
nS
--
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
M2N7000 TSM2N7000Taiwan Semiconductor
Taiwan Semiconductor


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