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8050S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON TRANSISTOR - Unisonic Technologies

भाग संख्या 8050S
समारोह NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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8050S pdf
8050S
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30 V
Collector-Emitter Voltage
VCEO
20 V
Emitter-Base Voltage
VEBO
5V
Collector Current
IC 700 mA
Collector Dissipation(TA=25°C)
SOT-23
TO-92
PC
350 mW
1W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO
ICBO
IE = 100μA, IC =0
VCB = 30V,IE = 0
IEBO
hFE1
VEB = 5V, IC = 0
VCE = 1V, IC = 1mA
hFE2
hFE3
VCE = 1V, IC = 150 mA
VCE = 1V, IC = 500mA
VCE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) VCE = 1V, IC = 10mA
fT VCE = 10V, IC = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
MIN TYP MAX UNIT
30 V
20 V
5V
1 uA
100 nA
100
120 400
40
0.5 V
1.2 V
1.0 V
100 MHz
9.0 pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001.I

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