DataSheet.in

5303D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH VOLTAGE NPN TRANSISTOR - Unisonic Technologies

भाग संख्या 5303D
समारोह HIGH VOLTAGE NPN TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
1 Page
		
<?=5303D?> डेटा पत्रक पीडीएफ

5303D pdf
5303D
Preliminary
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC 2
A
Collector Peak Current (tp<5ms)
ICM 4
A
Base Current
IB 1
A
Base Peak Current (tp<5ms)
IBM 2
A
Collector Dissipation (TC25°С)
PC 25
W
Maximum Operating Junction Temperature
TJ +150 °С
Storage Temperature Range
TSTG
-65~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
SYMBOL
θJA
θJC
RATINGS
100
6.25
UNIT
°С/W
°С/W
„ ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Breakdown Voltage (Note)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
IC = 1mA, IB = 0
IC = 10mA, IE = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time
hFE1 VCE =5V, IC =10mA
hFE2 VCE =5V, IC =400mA
hFE3 VCE =5V, IC =1A
VCE(SAT1) IC =0.5A, IB =0.1A
VCE(SAT2) IC =1A, IB =0.25A
VBE(SAT) IC =0.5A, IB =0.1A
VBE(SAT2) IC =1A, IB =0.25A
tON VCC =250V, IC =1A,
tSTG IB1=IB2 =0.2A, tp =25uS Duty
tF Cycle<1%
Diode
Forward Voltage Drop
VF IC =1A
Fall Time
tF IC =1A
Note: Pulsed duration = 300µS, duty cycle 2%
MIN TYP MAX UNIT
700 V
400 V
10 V
1 µA
1 µA
10
10 30
5
0.5
1.1 1.5
1.1
1.2
V
V
V
V
0.15 0.3
0.5 0.9
0.2 0.4
µS
µS
µS
1.4 V
800 µS
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R223-004.a

विन्यास 3 पेज
डाउनलोड[ 5303D Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
5303DHIGH VOLTAGE NPN TRANSISTORUnisonic Technologies
Unisonic Technologies


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English