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CED01N6G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Chino-Excel Technology

भाग संख्या CED01N6G
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
पूर्व दर्शन
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<?=CED01N6G?> डेटा पत्रक पीडीएफ

CED01N6G pdf
CED01N6G/CEU01N6G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.6A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
Ciss
Coss
Crss
VDS = 15V, ID = 0.5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 300V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
600
2
Typ
7.3
210
55
25
20
11
26
18.5
7.2
0.7
4
Max Units
20
100
-100
V
µA
nA
nA
4V
9.3
10 S
pF
pF
pF
26 ns
14.3 ns
33.8 ns
24 ns
9.4 nC
nC
nC
1A
1.5 V
6
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