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CES2308 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Chino-Excel Technology

भाग संख्या CES2308
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
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<?=CES2308?> डेटा पत्रक पीडीएफ

CES2308 pdf
CES2308
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5.4A
VGS = 2.5V, ID = 4.3A
Forward Transconductance
Switching Characteristics d
gFS VDS = 10V, ID = 5.4A
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 5.4A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
20
0.5
Typ
21
27
17
0.35
0.87
3.60
2.01
4.3
1.1
2.5
Max Units
V
1 µA
10 µA
-10 µA
1.2 V
27 m
36 m
S
0.7 µs
1.8 µs
7.5 µs
4.3 µs
7.5 nC
nC
nC
5.4 A
1.2 V
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