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DMN4034SSD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN4034SSD
समारोह 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMN4034SSD pdf
A Product Line of
Diodes Incorporated
DMN4034SSD
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note 4)
TA = 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
40
±20
6.3
5.0
4.8
24.8
3.3
24.8
Unit
V
V
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 3 & 6)
(Notes 3 & 7)
(Notes 4 & 6)
(Notes 3 & 6)
(Notes 3 & 7)
(Notes 4 & 6)
(Notes 6 & 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.25
10.0
1.80
14.3
2.14
17.2
100
70
58
55
-55 to 150
Unit
W
mW/°C
°C/W
°C
Notes:
2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
www.DataSheet4U.com
DMN4034SSD
Document Number DS32105 Rev 1 - 2
2 of 8
www.diodes.com
March 2010
© Diodes Incorporated

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