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KM736V747 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM - Samsung Semiconductor

भाग संख्या KM736V747
समारोह (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
मैन्युफैक्चरर्स Samsung Semiconductor 
लोगो Samsung Semiconductor लोगो 
पूर्व दर्शन
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<?=KM736V747?> डेटा पत्रक पीडीएफ

KM736V747 pdf
KM736V747
KM718V847
128Kx36 & 256Kx18 Flow-Through NtRAMTM
128Kx36 & 256Kx18-Bit Flow-Through NtRAMTM
FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A Package.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol -8 -9 -10 Unit
tCYC 10 12 12 ns
tCD 8.0 9.0 10.0 ns
tOE 3.5 3.5 3.5 ns
GENERAL DESCRIPTION
The KM736V747 and KM718V847 are 4,718,592-bit Synchro-
nous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incomming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The KM736V747 and KM718V847 are implemented with SAM-
SUNGs high performance CMOS technology and is available
in 100pin TQFP packages. Multiple power and ground pins
minimize ground bounce.
LOGIC BLOCK DIAGRAM
A [0:16]or
A [0:17]
LBO
A0~A1
ADDRESS
REGISTER A2~A16 or A2~A17
BURST
ADDRESS
COUNTER
A0~A1
128Kx36 , 256Kx18
MEMORY
ARRAY
CLK
CKE
K
CS1
CS2
CS2
ADV
WE
BWx
(x=a,b,c,d or a,b)
OE
ZZ
DQa0 ~ DQd7 or DQa0 ~ DQb8
DQPa ~ DQPd
WRITE
ADDRESS
REGISTER
CONTROL
LOGIC
DATA-IN
K REGISTER
36 or 18
BUFFER
www.DataSheet.in
NtRAMTM and No Turnaround Random Access Memory are trademarks of Samsung,
and its architecture and functionalities are supported by NEC and Toshiba.
- 2 - July 1999
Rev 4.0

विन्यास 17 पेज
डाउनलोड[ KM736V747 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
KM736V747(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAMSamsung Semiconductor
Samsung Semiconductor
KM736V749(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAMSamsung Semiconductor
Samsung Semiconductor


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