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SBR13003B1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Power Transistor - WINSEMI SEMICONDUCTOR

भाग संख्या SBR13003B1
समारोह NPN Power Transistor
मैन्युफैक्चरर्स WINSEMI SEMICONDUCTOR 
लोगो WINSEMI SEMICONDUCTOR लोगो 
पूर्व दर्शन
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<?=SBR13003B1?> डेटा पत्रक पीडीएफ

SBR13003B1 pdf
SBR13003B1
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
Value
Units
Min Typ Max
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
400 - - V
VCE(sat)
VBE(sat)
ICBO
hFE
ton
ts
tf
ts
tf
Ic=0.5A,Ib=0.1A
Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Base-Emitter Saturation Voltage
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
0.3
- - 0.5
1.0
1.0
--
1.2
Collector-Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
Vcb=700V, Tc=100
1.0
--
5.0
DC Current Gain
Vce=2V,Ic=0.5A
Vce=2V, Ic=1.0A
10 - 30
5 - 25
Resistive Load
Turn-on Time
Storage Time
Fall Time
VCC=125V ,Ic=1A
TIBp1==02.52A , IB2=-0.5A
- 0.2 1.0
1.5 3.0
0.15 0.4
Inductive Load
Storage Time
Fall Time
VCC=15V ,Ic=1A
LIB=1=00.3.25Am,HI,BV2=c-la0m.5Ap=300V
-
-
1.2 4.0
0.12 0.3
V
V
mA
ts Inductive Load
Storage Time
tf
Fall Time
VCC=15V ,Ic=1A
LIB=1=00.3.25Am,HI,BV2=c-la0m.5Ap=300V -
2.4 5.0
Tc=100- 0.15 0.4
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
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डाउनलोड[ SBR13003B1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SBR13003B1NPN Power TransistorWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR


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