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N04L63W2A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit - ON Semiconductor

भाग संख्या N04L63W2A
समारोह 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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N04L63W2A pdf
N04L63W2A
Functional Block Diagram
www.DataSheet4U.com
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
16K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
L HX XHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby
Write3
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Rev. 10 | Page 2 of 10 | www.onsemi.com

विन्यास 10 पेज
डाउनलोड[ N04L63W2A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
N04L63W2A4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bitON Semiconductor
ON Semiconductor


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