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N04L163WC1C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit - NanoAmp Solutions

भाग संख्या N04L163WC1C
समारोह 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
मैन्युफैक्चरर्स NanoAmp Solutions 
लोगो NanoAmp Solutions लोगो 
पूर्व दर्शन
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N04L163WC1C pdf
NanoAmp Solutions, Inc.
Functional Block Diagram
N04L163WC1C
Advance wInwfwo.DramtaShaeteti4oUn.com
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
CE
WE
OE
UB
Control
Logic
LB
16K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXX
XXXHH
L L X3 L1 L1
L H L L1 L1
L H H L1 L1
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
10 pF
10 pF
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2

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डाउनलोड[ N04L163WC1C Datasheet.PDF ]


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