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DMN26D0UDJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN26D0UDJ
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMN26D0UDJ pdf
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
Symbol Min
BVDSS
IDSS
20
Gate-Body Leakage
IGSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
0.5
0.5
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
Typ
1.8
2.4
2.9
3.7
242
14.1
2.9
1.6
3.8
7.9
13.4
15.2
Max
500
±1
±500
±100
1.0
3.0
4.0
6.0
10.0
1.0
Unit Test Condition
V VGS = 0V, ID = 100μA
nA VDS = 20V, VGS = 0V
μA VGS = ±10V, VDS = 0V
nA VGS = ±8V, VDS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
Ω VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
mS VDS =10V, ID = 0.1A
V VGS = 0V, IS = 115mA
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
pF
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0
0.8
0.7 VGS = 8V
0.6
0.5
VGS = 4.5V
VGS = 3.0V
0.4 VGS = 2.5V
0.3
VGS = 2.0V
0.2
0.1
0
0
VGS = 1.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
3
0.4
VDS = -10V
0.3
0.2
0.1
TA = -55°C
TA = 25°C
TA = 85°C
TA = 125°C
TA = 150°C
0
0 0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN26D0UDJ
Document number: DS31481 Rev. 4 - 2
2 of 5
www.diodes.com
May 2010
© Diodes Incorporated

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DMN26D0UDJDUAL N-CHANNEL ENHANCEMENT MODE MOSFETDiodes
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