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TEMD5110 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PIN Photodiode - Vishay Semiconductors

भाग संख्या TEMD5110
समारोह Silicon PIN Photodiode
मैन्युफैक्चरर्स Vishay Semiconductors 
लोगो Vishay Semiconductors लोगो 
पूर्व दर्शन
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TEMD5110 pdf
TEMD5110
Vishay Semiconductors
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Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
IF = 50 mA
VF 1 1.3 V
IR = 100 µA, E = 0
V(BR)
60
V
VR = 10 V, E = 0
Iro
2 30 nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25 40 pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 k, λ = 820 nm
VR = 10 V, RL = 1 k, λ = 820 nm
Symbol
Vo
TKVo
Ik
TKIk
Ira
ϕ
λp
λ0.5
NEP
tr
tf
Min Typ. Max
350
-2.6
50
0.1
45 55
± 65
940
790 to 1050
4 x 10-14
100
100
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
1.4
Unit
mV
mV/K
µA
%/K
µA
deg
nm
nm
W/Hz
ns
ns
100
10
1
20
94 8403
VR = 10 V
40 60 80 100
Tamb - Ambient Temperature ( ° C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20 40 60 80 100
Tamb - Ambient Temperature ( ° C )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com
2
Document Number 84658
Rev. 1.0, 08-Mar-05

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डाउनलोड[ TEMD5110 Datasheet.PDF ]


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