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FQD6N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD6N60C
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD6N60C?> डेटा पत्रक पीडीएफ

FQD6N60C pdf
Package Marking and Ordering Information
Device Marking
FQD6N60C
FQD6N60C
Device
FQD6N60CTM
FQD6N60CTF
Package
DPAK
DPAK
Reel Size
380mm
380mm
Tape Width
16mm
16mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
www.DataIGSShSeFet4U.comGate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.0 A
VDS = 40 V, ID = 2.0 A
2.0
--
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 5.5 A,
RG = 25
VDS = 480 V, ID = 5.5 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
--
0.6
--
--
--
--
--
1.7
4.8
620
65
7
15
45
45
45
16
3.5
6.5
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 4.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.0 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
310
2.1
Quantity
2500
2000
Max. Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
2.0
-- S
810 pF
85 pF
10 pF
40 ns
100 ns
100 ns
100 ns
20 nC
-- nC
-- nC
4.0 A
16 A
1.4 V
-- ns
-- µC
FQD6N60C Rev. A
2 www.fairchildsemi.com

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डाउनलोड[ FQD6N60C Datasheet.PDF ]


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