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TEMD5010X01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PIN Photodiode - Vishay Siliconix

भाग संख्या TEMD5010X01
समारोह Silicon PIN Photodiode
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=TEMD5010X01?> डेटा पत्रक पीडीएफ

TEMD5010X01 pdf
TEMD5010X01
Vishay SemiconductorsSilicon PIN Photodiode, RoHS Compliant, Releasedwfowrw.DataSheet4U.com
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
IF = 50 mA
IR = 100 µA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
V(BR)
Iro
CD
CD
Vo
TKVo
Ik
TKIk
Ira
ϕ
λp
λ0.1
NEP
tr
tf
MIN.
60
45
TYP.
1
2
70
25
350
- 2.6
50
0.1
55
± 65
940
430 to 1100
4 x 10-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
µA
%/K
µA
deg
nm
nm
W/Hz
ns
ns
1000
100
10
VR = 10 V
1
20 40 60 80 100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2 VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
20 40 60 80 100
94 8409
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 84679
Rev. 1.3, 16-Sep-08

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