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APTGT75X60T3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 3 Phase bridge Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT75X60T3G
समारोह 3 Phase bridge Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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<?=APTGT75X60T3G?> डेटा पत्रक पीडीएफ

APTGT75X60T3G pdf
www.DataSheet4U.com
APTGT75X60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
VCE(sat)
VGE(th)
IGES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 75A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE, IC = 600µA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
4620
300
140
pF
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
110
45
200
40
120
50
250
60
0.35
0.6
2.2
2.6
ns
ns
mJ
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 50A
VGE = 0V
IF = 50A
VR = 300V
di/dt =1800A/µs
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
50 A
1.6 2
1.5
V
100 ns
150
2.6 µC
5.4
0.6
1.2
mJ
www.microsemi.com
2-5

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APTGT75X60T3G3 Phase bridge Trench Field Stop IGBT Power ModuleMicrosemi Corporation
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