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APTGT75X120E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 3 Phase bridge Trench IGBT Power Module - Advanced Power Technology

भाग संख्या APTGT75X120E3
समारोह 3 Phase bridge Trench IGBT Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APTGT75X120E3 pdf
APTGT75X120E3www.DataSheet4U.com
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 5mA
1200
V
ICES Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5 mA
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE(th) Gate Threshold Voltage
VGE = VCE , IC = 3 mA
5.0
6.5 V
IGES Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
500 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
5340
280
240
pF
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
260
30
420
70
285
45
520
90
ns
ns
9.5 mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
Er Reverse Recovery Energy
IF = 75A
VGE = 0V
IF = 75A
VR = 600V
di/dt =825A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
3 mJ
6
Qrr Reverse Recovery Charge
IF = 75A
VR = 600V
di/dt =825A/µs
Tj = 25°C
Tj = 125°C
7.6
13.7
µC
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
IGBT
Diode
M5
Min Typ Max Unit
0.35
0.58
°C/W
2500
V
-40 150
-40 125 °C
-40 125
3 4.5 N.m
300 g
APT website – http://www.advancedpower.com
2-3

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