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APTGT75X120BTP3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Input rectifier bridge Brake 3 Phase Bridge Trench IGBT Power Module - Advanced Power Technology

भाग संख्या APTGT75X120BTP3
समारोह Input rectifier bridge Brake 3 Phase Bridge Trench IGBT Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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APTGT75X120BTP3 pdf
APTGT75X120RTP3
APTGT75X120BTP3www.DataSheet4U.com
IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
IF DC Forward Current
TC = 80°C
Max ratings
1200
60
50
100
±20
200
25
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
IF
IFRM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
DC Forward Current
Repetitive Peak Forward Current
tp = 1ms
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
TC = 80°C
Max ratings
1200
105
75
150
±20
350
150A @ 1100V
75
150
Unit
V
A
V
W
A
Unit
V
A
V
W
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
IR Reverse Current
VF Forward Voltage
RthJC Junction to Case
Test Conditions
Min Typ Max Unit
VR = 1600V
Tj = 150°C
3
mA
IF = 75A
Tj = 150°C
1.2 V
0.65 °C/W
IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
VCE(on)
VGE(th)
IGES
Cies
Coes
Cres
VF
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
RthJC Junction to Case
VGE = 15V
Tj = 25°C
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
VGE = 0V,
VCE = 25V
f = 1MHz
VGE = 0V
IF = 25A
Tj = 25°C
Tj = 125°C
IGBT
Diode
Min
1.4
5.0
Typ Max Unit
400 µA
1.7
2.0
5.8
3600
188
163
1.6
1.8
2.1
6.5
600
V
V
nA
pF
V
0.6
1.2
°C/W
APT website – http://www.advancedpower.com
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APTGT75X120BTP3Input rectifier bridge Brake 3 Phase Bridge Trench IGBT Power ModuleAdvanced Power Technology
Advanced Power Technology


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