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APTGT75TL60T3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Three level inverter Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT75TL60T3G
समारोह Three level inverter Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=APTGT75TL60T3G?> डेटा पत्रक पीडीएफ

APTGT75TL60T3G pdf
APTGT75TL60T3Gwww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 75A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE, IC = 600µA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
600 nA
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
RthJC Junction to Case Thermal Resistance
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
4620
300
140
pF
VGE=±15V, IC=75A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE 15V ; VBus = 360V
tp 6µs ; Tj = 150°C
0.8 µC
110
45
200
ns
40
120
50 ns
250
60
0.35
0.6
mJ
2.2
2.6
mJ
380 A
0.60 °C/W
www.microsemi.com
2-7

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APTGT75TL60T3GThree level inverter Trench Field Stop IGBT Power ModuleMicrosemi Corporation
Microsemi Corporation


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