DataSheet.in

APTGT75TDU120PG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Triple Dual Common Source Fast Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT75TDU120PG
समारोह Triple Dual Common Source Fast Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=APTGT75TDU120PG?> डेटा पत्रक पीडीएफ

APTGT75TDU120PG pdf
APTGT75TDU120PGwww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
250 µA
VGE =15V
IC = 75A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE = VCE , IC = 3 mA
5.0
6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
5340
280 pF
240
260
30 ns
420
70
285
50
520 ns
90
7
mJ
8.1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 75A
VGE = 0V
1200
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
250
500
µA
75 A
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 75A
VR = 600V
di/dt =2000A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
7
14
3
5.5
ns
µC
mJ
www.microsemi.com
2-5

विन्यास 5 पेज
डाउनलोड[ APTGT75TDU120PG Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APTGT75TDU120PTriple Dual Common Source Trench IGBT Power ModuleAdvanced Power Technology
Advanced Power Technology
APTGT75TDU120PGTriple Dual Common Source Fast Trench Field Stop IGBT Power ModuleMicrosemi Corporation
Microsemi Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English