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APTGT75H120T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Full - Bridge Fast Trench Field Stop IGBT Power Module - Advanced Power Technology

भाग संख्या APTGT75H120T
समारोह Full - Bridge Fast Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTGT75H120T?> डेटा पत्रक पीडीएफ

APTGT75H120T pdf
APTGT75H120Twww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
250 µA
VGE = 15V
IC = 75A
Tj = 25°C
Tj = 125°C
1.7 2.1
2.0
V
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Min Typ Max Unit
5345
280 pF
240
280
40
450 ns
75
290
45 ns
550
90
7 mJ
8
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
1200
V
350
600
µA
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
50% duty cycle
IF = 75A
IF = 75A
VR = 600V
di/dt =2000A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
75 A
1.6 2.1
1.6
V
170 ns
280
7 µC
14
APT website – http://www.advancedpower.com
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