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APTGT75DH60T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Asymmetrical - Bridge Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT75DH60T1G
समारोह Asymmetrical - Bridge Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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APTGT75DH60T1G pdf
APTGT75DH60T1Gwww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 75A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE, IC = 600µA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
4620
300
140
pF
VGE=±15V, IC=75A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
VGE 15V ; VBus = 360V
tp 6µs ; Tj = 150°C
0.8
110
45
200
40
120
50
250
60
0.35
0.6
2.2
2.6
380
µC
ns
ns
mJ
mJ
A
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
600 V
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
250
500
µA
IF DC Forward current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 75A
VGE = 0V
IF = 75A
VR = 300V
di/dt =2000A/µs
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
75
1.6 2
1.5
100
150
3.6
7.6
0.85
1.8
A
V
ns
µC
mJ
CR1 & CR4 are IGBT protection diodes only
www.microsemi.com
2–6

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APTGT75DH60T1GAsymmetrical - Bridge Trench Field Stop IGBT Power ModuleMicrosemi Corporation
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