DataSheet.in

APTGT75DH120T3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module - Microsemi Corporation

भाग संख्या APTGT75DH120T3G
समारोह Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=APTGT75DH120T3G?> डेटा पत्रक पीडीएफ

APTGT75DH120T3G pdf
APTGT75DH120T3Gwww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
250 µA
VGE =15V
IC = 75A
Tj = 25°C 1.4
Tj = 125°C
1.7 2.1
2.0
V
VGE = VCE , IC = 3 mA
5.0
6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
5340
280
240
pF
VGE=±15V, IC=75A
VCE=600V
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7Ω
Tj = 125°C
Tj = 125°C
VGE 15V ; VBus = 900V
tp 10µs ; Tj = 125°C
0.7
260
30
420
70
285
50
520
90
7
8.1
300
µC
ns
ns
mJ
A
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200 V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 125°C
250
500
µA
IF DC Forward Current
Tc = 80°C
75
A
VF Diode Forward Voltage
IF = 75A
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 75A
VR = 600V
di/dt =2000A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
7
14
3
5.5
ns
µC
mJ
CR1 & CR4 are IGBT protection diodes only
www.microsemi.com
2-5

विन्यास 5 पेज
डाउनलोड[ APTGT75DH120T3G Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
APTGT75DH120T3GAsymmetrical - Bridge Fast Trench Field Stop IGBT Power ModuleMicrosemi Corporation
Microsemi Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English