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APTGT75DH120T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module - Advanced Power Technology

भाग संख्या APTGT75DH120T
समारोह Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module
मैन्युफैक्चरर्स Advanced Power Technology 
लोगो Advanced Power Technology लोगो 
पूर्व दर्शन
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<?=APTGT75DH120T?> डेटा पत्रक पीडीएफ

APTGT75DH120T pdf
APTGT75DH120Twww.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
250 µA
VGE = 15V
IC = 75A
Tj = 25°C
Tj = 125°C
1.7 2.1
2.0
V
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
RG = 4.7
Min Typ Max Unit
5345
280 pF
240
280
40
450 ns
75
290
45 ns
550
90
7 mJ
8
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
Min Typ Max Unit
1200
V
VR=1200V
Tj = 25°C
Tj = 125°C
250
500
µA
50% duty cycle Tc = 80°C
75
A
IF = 75A
IF = 75A
VR = 600V
di/dt =2000A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.5 2.0
1.4
150
250
7
13.5
V
ns
µC
APT website – http://www.advancedpower.com
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