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MAX5055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4A 20ns Dual MOSFET Drivers - Maxim Integrated Products

भाग संख्या MAX5055
समारोह 4A 20ns Dual MOSFET Drivers
मैन्युफैक्चरर्स Maxim Integrated Products 
लोगो Maxim Integrated Products लोगो 
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<?=MAX5055?> डेटा पत्रक पीडीएफ

MAX5055 pdf
4A, 20ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
VDD...............................................................................-0.3V to +18V
INA+, INA-, INB+, INB- ...............................................-0.3V to +18V
OUTA, OUTB...................................................-0.3V to (VDD + 0.3V)
OUTA, OUTB Short-Circuit Duration ........................................10ms
Continuous Source/Sink Current at OUT_ (PD < PDMAX) .....200mA
Continuous Power Dissipation (TA = +70°C)
8-Pin TDFN-EP (derate 18.2mW/°C above +70°C)........1454mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C)… ........1538mW
8-Pin SO (derate 5.9mW/°C above +70°C)… ..................471mW
Operating Temperature Range..............................-40°C to +125°C
Storage Temperature Range .................................-65°C to +150°C
Junction Temperature ...........................................................+150°C
Lead Temperature (soldering, 10s)......................................+300°C
Soldering Temperature (reflow)............................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
8 TDFN-EP
Junction-to-Ambient Thermal Resistance (θJA)...............+41°C/W
Junction-to-Case Thermal Resistance (θJC)......................+8°C/W
8 SO
Junction-to-Ambient Thermal Resistance (θJA)................+132°C/W
Junction-to-Case Thermal Resistance (θJC).......................+40°C/W
8 SO-EP
Junction-to-Ambient Thermal Resistance (θJA)..................+41°C/W
Junction-to-Case Thermal Resistance (θJC)......................+7°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(VDD = 4V to 15V, TA = -40°C to +125°C, unless otherwise noted. Typical values are at VDD = 15V and TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
POWER SUPPLY
VDD Operating Range
VDD Undervoltage Lockout
VDD
UVLO
VDD rising
4 15
3.00 3.50 3.85
V
V
VDD Undervoltage Lockout
Hysteresis
200 mV
VDD Undervoltage Lockout to
Output Delay
VDD rising
12 µs
VDD Supply Current
DRIVER OUTPUT (SINK)
Driver Output Resistance Pulling
Down
Peak Output Current (Sinking)
Output-Voltage Low
Latchup Protection
IDD
IDD-SW
INA- = INB- = VDD,
INA+ = INB+ = 0V
(not switching)
VDD = 4V
VDD = 15V
INA- = 0V, INB+ = VDD = 15V,
INA+ = INB- both channels switching at
250kHz, CL = 0F
RON-N
IPK-N
ILUP
VDD = 15V,
IOUT_ = -100mA
TA = +25°C
TA = +125°C
VDD = 4.5V,
IOUT_ = -100mA
TA = +25°C
TA = +125°C
VDD = 15V, CL = 10,000pF
IOUT_ = -100mA
VDD = 4.5V
VDD = 15V
Reverse current IOUT_ (Note 2)
28 55
µA
40 75
1 2.4 4 mA
1.1 1.8
1.5 2.4
2.2 3.3
3.0 4.5
4A
0.45
V
0.24
400 mA
2 _______________________________________________________________________________________

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