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FDMC7570S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Trench SyncFET - Fairchild Semiconductor

भाग संख्या FDMC7570S
समारोह N-Channel Power Trench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC7570S?> डेटा पत्रक पीडीएफ

FDMC7570S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
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Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
25
V
21 mVC
500 µA
100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.7
3
V
ID = 10 mA, referenced to 25 °C
-4 mV/°C
VGS = 10 V, ID = 27 A
VGS = 4.5 V, ID = 21.5 A
VGS = 10 V, ID = 27 A, TJ = 125 °C
VDS = 5 V, ID = 27 A
1.6 2
2.4 2.9 m
2.2 2.8
154 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
3315
1010
168
1.2
4410
1345
255
2.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 27 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V
ID = 27 A
14
6.8
34
4.5
49
22
10.8
5.5
26
14
55
10
68
31
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 27 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.78 1.2
0.43 0.8
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 27 A, di/dt = 300 A/µs
30 48 ns
29 46 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A
4. As an N-ch device, the negative Vgs rating is for lower duty cycle pulse occurrence only. No continuous rating is implied.
FDMC7570S Rev.C
2
www.fairchildsemi.com

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