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FDMC7660 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMC7660
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC7660?> डेटा पत्रक पीडीएफ

FDMC7660 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
14 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
1.2 1.7 2.5
V
ID = 250 μA, referenced to 25°C
-6 mV/°C
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A, TJ = 125°C
VDS = 5 V, ID = 20 A
1.8 2.2
2.6 3.3 mΩ
2.2 3.1
163 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
3630
1345
110
0.9
4830
1790
165
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 20 A
14 25 ns
6.8 14 ns
36 58 ns
5.7 11 ns
54 86 nC
24 38 nC
11 nC
5.6 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.8 1.2
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 20 A, di/dt = 100 A/μs
45 63 ns
25 35 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
2
www.fairchildsemi.com

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