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GM3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM CORPORATION

भाग संख्या GM3055
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM CORPORATION 
लोगो GTM CORPORATION लोगो 
पूर्व दर्शन
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<?=GM3055?> डेटा पत्रक पीडीएफ

GM3055 pdf
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
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Electrical Characteristics @Tj = 25 (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
BVDss
Drain – Source Breakdown Voltage
VGS=0V, ID=250uA
30
BVDSS/ Tj Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA
-
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V,ID=8A
-
VGS=4.5V,ID=6A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
IDSS
Drain-Source Leakage Current(Tj=25 )
VDS=30V,VGS=0V
Drain-Source Leakage Current(Tj=150 )
VDS=24V,VGS=0V
-
-
IGSS Gate-Source Leakage
VGS=±20V
-
Qg Total Gate Charge2
ID=8A
-
Qgs Gate-Source Charge
VDS=24V
-
Qgd Gate-Drain (“Miller)Charge
VGS=5V
-
td(on)
Turn-on Delay Time2
VDS=15V
-
tr Rise Time
ID=8A
-
td(off)
Turn-off Delay Time
RG=3.4 ,VGS=10V
-
tf Fall Time
RD=1.9
-
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
Crss
Reverse Transfer Capacitance
f=1.0MHZ
-
Typ.
-
0.037
-
-
-
-
-
-
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
Max.
-
-
80
100
3
25
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/
m
m
V
uA
uA
nA
nC
nC
nC
nS
nS
nS
nS
pf
pf
pf

विन्यास 6 पेज
डाउनलोड[ GM3055 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GM3055N-CHANNEL ENHANCEMENT MODE POWER MOSFETGTM CORPORATION
GTM CORPORATION


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