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FJD3305H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Transistor - Fairchild Semiconductor

भाग संख्या FJD3305H1
समारोह NPN Silicon Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FJD3305H1?> डेटा पत्रक पीडीएफ

FJD3305H1 pdf
Electrical Characteristics * TC=25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
Collector-Base Breakdwon Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: Pulse Width300µs, Duty Cycle2%
IC = 500µA, IE = 0
IC = 5mA, IB = 0
IE = 500µA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 125V, IC = 2A
IB1 = -IB2 = 0.4A
RL = 62.5
Min.
700
400
9
19
8
4
Typ.
65
Max
1
1
28
40
0.5
0.6
1.0
1.2
1.6
0.8
4.0
0.9
Units
V
V
V
µA
µA
V
V
V
V
V
MHz
pF
µs
µs
µs
www.DataSheet4U.com
© 2009 Fairchild Semiconductor Corporation
FJD3305H1 Rev. A
2
www.fairchildsemi.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FJD3305H1NPN Silicon TransistorFairchild Semiconductor
Fairchild Semiconductor


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