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FDMC8296 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDMC8296
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC8296?> डेटा पत्रक पीडीएफ

FDMC8296 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
VDS = 24V,
VGS = 0V,
TJ = 125°C
VGS = ±20V, VDS = 0V
30 V
17 mV/°C
1
250
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 12A,
VDD = 5V, ID = 12A
TJ = 125°C
1.0
1.9 3.0
V
-6 mV/°C
6.5 8.0
9.5 13.0 m
9.0 12.8
44 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1038
513
87
0.9
1385
685
135
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg(TOT)
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
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Drain-Source Diode Characteristics
VDD = 15V, ID = 12A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 4.5V
VDD = 15V,
ID = 12A
9 18 ns
3 10 ns
19 35 ns
2 10 ns
16 23 nC
7.6 10.6 nC
3 nC
2.5 nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 12A
VGS = 0V, IS = 1.9A
(Note 2)
(Note 2)
0.82 1.3
0.73 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 12A, di/dt = 100A/µs
25 45 ns
9 18 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 11A, VDD = 27V, VGS = 10V.
FDMC8296 Rev.B
2
www.fairchildsemi.com

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डाउनलोड[ FDMC8296 Datasheet.PDF ]


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